sing the "free surface concentration" and "constant surface concentration" models

growing processes of the LPE technique are described under bounded solution conditions and the parameters for very thin film growing are obtained.GalnAsP/InP supper lattice structures have been developed using these parameters.5um(Ga

0.40

In

0.60

As

0.89

P

0.11

)/10nm(InP)3 wells structure is accomplished reproducibly under the condition of

l

(the solution depth)=200μm～500μm

t

g

=0.2s and

T

g

=570℃.It has been proved that accurate LPE system is capable of growing MQW structure under suitable conditions.