ZnO

a wide direct-gap semiconductor

attracts as much attention as GaN in optoelectronics research field. ZnO not only has the same crystal structure as GaN

but also has strong exciton binding energy of 60meV which is 2.4 times to that of GaN. ZnO films have been grown by many methods

such as chemical vapour deposition(CVD)

molecular beam epitaxy(MBE)and metal organic chemical vapor deposition(MOCVD). We adopt sputtering for the growth of ZnO films. Sputtering methods have several advantages. They can deposit large area films of well controlled compositions economically and the growth rate is high enough for thick films and low enough for ultrathin films by changing the sputtering rate. ZnO films were deposited on(001)silicon substrate by radio frequency(r.f.)magnetron sputtering. Gas flux ratio of O

2

to Ar and the RF power is 3:1 and 600W

respectively. The sputtering time was 40min. The substrates were rotated and heated to 200℃ during the sputtering. The X-ray diffraction(XRD)patterns of the sample showed sharp diffraction peak for ZnO(002)

which indicate that as-sputtered film were highly c-axis oriented. The sample grown under the conditions could generate strong luminescence of ZnO. The band edge emission and deep level emission were observed in photoluminescence(PL)spectra at room temperature.